|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm * * High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.5 50 1000 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Equivalent Circuit COLLECTOR BASE EMITTER 1 2003-02-04 2SD1631 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Test Condition VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Input IB1 IB2 IB2 Output 15 Min 30 4000 Typ. Max 10 10 1.5 2.2 V V Unit A A V Turn-on time ton IB1 20 s 0.20 Switching time Storage time tstg VCC = 15 V 0.6 s Fall time tf IB1 = -IB2 = 1 mA IC = 1 A, duty cycle 1% 0.3 Marking D1631 Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD1631 IC - VCE 600 Common emitter 500 Ta = 25C 60 50 40 300 30 200 20 100 IB = 10 A 0 1 2 3 4 5 6 7 500 600 IC - VCE Common emitter Ta = 100C 35 30 25 300 20 15 10 100 IB = 5 A 0 1 2 3 4 5 6 7 (mA) IC Collector current Collector current IC Collector-emitter voltage VCE (V) 400 (mA) 400 200 0 0 0 0 Collector-emitter voltage VCE (V) IC - VCE 600 Common emitter 500 Ta = -50C 160 140 400 120 100 80 200 60 40 100 IB = 20 A 0 1 2 3 4 5 6 7 50000 30000 hFE - IC (mA) hFE Ta = 100C 10000 25 5000 3000 -50 Collector current 300 DC current gain IC 1000 Common emitter 500 300 0.003 0.01 0.03 0.1 VCE = 2 V 0.3 1 2 0 0 Collector current IC (A) Collector-emitter voltage VCE (V) IC - VBE 1.0 VCE (sat) - IC 10 Common emitter VCE = 2 V 0.8 Collector-emitter saturation voltage VCE (sat) (V) IC 0.6 5 3 IC/IB = 1000 1 0.5 0.3 Ta = -50C Collector current (A) 0.4 Common emitter Ta = 100C 25 -50 100 25 0.2 0.1 0.003 0.01 0.03 0.1 0.3 1 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) Base-emitter voltage VBE (V) 3 2003-02-04 2SD1631 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) 10 Common emitter IC/IB = 1000 Ta = -50C 1 0.5 0.3 25 100 3 1.2 PC - Ta (W) Collector power dissipation PC 0.8 0.4 3 5 0.1 0.002 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0 40 80 120 160 Ambient temperature Ta (C) Safe Operating Area 5 3 IC max (pulsed)* 1 ms* 1 IC max (continuous) 10 ms* 300 ms* 2 s* DC operation Ta = 25C (mA) Collector current IC 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 100 Collector-emitter voltage VCE (V) 4 2003-02-04 2SD1631 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-02-04 This datasheet has been download from: www..com Datasheets for electronics components. |
Price & Availability of 2SD1631 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |